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| CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individual, isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0 SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA UNITS V V V mA mW C C/W SOT-363 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 30 25 4.5 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib hfe NF TEST CONDITIONS VCB=15V VEB=4.5V IC=100A IC=1.0mA IE=100A IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500A, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100A, RS=10k f=10Hz to 15.7kHz MIN MAX 50 100 UNITS nA nA V V V V V 30 25 4.5 0.5 0.8 1200 400 450 400 50 450 4.0 10 1800 2.0 MHz pF pF dB MATCHING CHARACTERISTICS: SYMBOL hFE1/hFE2* |VBEON1-VBEON2| TEST CONDITIONS VCE=5.0V, IC=1.0mA VCE=5.0V, IC=100A MIN 0.9 MAX 1.0 5.0 UNITS mV * The lowest hFE reading is taken as hFE1. R2 (7-August 2003) Central TM CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS Semiconductor Corp. SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: C9M0 R2 (7-August 2003) |
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